| PART |
Description |
Maker |
| WP-MKT4-173250-S WP-MKT4 WP-MKT4-173225-D WP-MKT4- |
MOSFET DUAL N-CHAN 20V SOT-323 窄带调频甚高频发射模
MOSFET N-CHAN DUAL 200MW SOT-363
MOSFET N-CHAN 50V 350MW SOT-23
MOSFET DUAL N-CHAN 50V SOT-26
FM Narrow Band VHF Transmitter Module
|
Electronic Theatre Controls, Inc.
Wireless Products
ETC[ETC]
List of Unclassifed Manufacturers
|
| MUX08FQ |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) SGL ENDED MULTIPLEXER, CDIP16
|
Analog Devices, Inc.
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| PHB101NQ04T PHP101NQ04T |
N-channel Trenchmos (tm) standard level FET
N-channel TrenchMOS standard level FET 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS standard level FET
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRGC49B120UB |
1200 V, N-CHANNEL IGBT
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| FJZ594JC FJZ594J FJZ594JB FJZ594JBTF FJZ594JTF FJZ |
Silicon N-Channel Junction FET
Si N-channel Junction FET 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| NID5003NT4 NID5003N |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK
Self-Protected FET with Temperature and Current Limit(带温度和电流限制的自保护FET)
42 V, 20 A, Single N−Channel, DPAK 20 A, 42 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET
Self-Protected FET with Temperature and Current Limit(甯?俯搴???垫???????淇??FET)
|
ONSEMI[ON Semiconductor]
|
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
|
| MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
